eGaN® FETs in High Frequency Resonant Converters
In this white paper eGaN FET technology is applied in a high frequency resonant converter. Previously, the advantages provided by eGaN FETs in hard switching isolated and non-isolated applications were addressed.
This paper will demonstrate the ability of the eGaN FET to improve efficiency and output power density in a soft switching application, as compared to what is achievable with existing power MOSFET devices. An isolated high frequency 48 V intermediate bus converter (IBC) with a 12 V output utilizing a resonant topology operating above 1 MHz is presented.
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Related Categories: Capacitors, Communication, Distributed power, Power, Processors, Switches, Transformers
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