Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gallium nitride transistors. One very typical application is a 26 W, 48 V to 5 V , Power over Ethernet Powered Device (PoE-PD).
A simplified forward converter schematic for this application using eGaN FETs and Linear Technology's LT1952in conjunction with the manufacturer's LTC3900 synchronous rectifier controller on the secondary side.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Inductors, Power, Semiconductors
More resources from Efficient Power Conversion Corporation (EPC)
Improve DC-DC Forward Converter Efficiency with eGaN FETs
DC-DC converter designers can achieve higher power density at lower power levels by using forward converters with synchronous rectification and gal...
Improve DC-DC Flyback Converter Efficiency Using eGaN FETs
DC-DC converter designers can achieve low cost at low power densities by using flyback converters and enhancement mode gallium nitride transistors....
Impact of Parasitics on Performance
With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance.